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BCW32LT1 General Purpose Transistors
NPN Silicon
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MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol VCEO VCBO VEBO IC Value 32 32 5.0 100 Unit Vdc Vdc Vdc mAdc 1 BASE
COLLECTOR 3
2 EMITTER
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature (1) FR- 5 = 1.0 0.75 (2) Alumina = 0.4 0.3 Symbol PD 225 1 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg 417 -55 to +150 mW/C C/W mW mW/C C/W C D2x SOT-23 (TO-236AB) CASE 318 STYLE 6 2 Value Unit mW 3
DEVICE MARKING
0.062 in. 0.024 in. 99.5% alumina.
x = Monthly Date Code
ORDERING INFORMATION
Device BCW32LT1 Package SOT-23 Shipping 3000 Units / Reel
(c) Semiconductor Components Industries, LLC, 1999
1
January, 2000 - Rev. 0
Publication Order Number: BCW32LT1/D
BCW32LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (IC = 2.0 mAdc, VEB = 0) Collector - Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 32 Vdc, IE = 0) (VCB = 32 Vdc, IE = 0, TA = 100C) V(BR)CEO V(BR)CBO V(BR)EBO ICBO -- -- -- -- 100 10 nAdc 32 32 5.0 -- -- -- -- -- -- Vdc Vdc Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector - Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) Base - Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE 200 VCE(sat) -- VBE(on) 0.55 -- 0.70 -- 0.25 Vdc -- 450 Vdc --
SMALL- SIGNAL CHARACTERISTICS
Output Capacitance (IE = 0, VCB = 10 Vdc, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) Cobo NF -- -- -- -- 4.0 10 pF dB
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 A BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 A 10 A IC = 1.0 mA 300 A 100 A BANDWIDTH = 1.0 Hz RS
10 7.0 5.0 10 A 3.0
100 A
30 A
Figure 1. Noise Voltage
Figure 2. Noise Current
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BCW32LT1
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25C)
500 k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1k BANDWIDTH = 1.0 Hz 1M 500 k 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k
BANDWIDTH = 1.0 Hz
2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100
10 Hz to 15.7 kHz
Noise Figure is defined as: NF 1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k
4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) I = Noise Current of the Transistor referred to the input. n (Figure 4) K = Boltzman's Constant (1.38 x 10-23 j/K) T = Temperature of the Source Resistance (K) R = Source Resistance (Ohms) S
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
IC, COLLECTOR CURRENT (A)
Figure 5. Wideband
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BCW32LT1
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125C
h FE, DC CURRENT GAIN
200
25C
- 55C 100 80 60 40 0.004 0.006 0.01 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
Figure 6. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 TJ = 25C IC, COLLECTOR CURRENT (mA) 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA
100
TA = 25C PULSE WIDTH = 300 s 80 DUTY CYCLE 2.0%
IB = 500 A 400 A 300 A
0.6
60 200 A 40 100 A 20
0.4
0.2
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40
Figure 7. Collector Saturation Region
Figure 8. Collector Characteristics
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10
V, TEMPERATURE COEFFICIENTS (mV/C)
1.4
1.6 0.8
*APPLIES for IC/IB hFE/2 25C to 125C
0
*qVC for VCE(sat) - 55C to 25C
- 0.8 25C to 125C - 1.6
qVB for VBE
- 2.4 0.1 0.2
- 55C to 25C 50 100
0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA)
Figure 9. "On" Voltages
Figure 10. Temperature Coefficients
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BCW32LT1
TYPICAL DYNAMIC CHARACTERISTICS
10 7.0 C, CAPACITANCE (pF) 5.0 Cib Cob 3.0 2.0 TJ = 25C f = 1.0 MHz
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
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BCW32LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
0.037 0.95
interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037 0.95
0.079 2.0 0.035 0.9 0.031 0.8
inches mm
SOT-23 SOT-23 POWER DISSIPATION The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows:
PD = TJ(max) - TA RJA
SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts.
PD = 150C - 25C 556C/W = 225 milliwatts
The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.
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BCW32LT1
PACKAGE DIMENSIONS SOT-23 (TO-236AB) CASE 318-08 ISSUE AF
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
A L
3
BS
1 2
V
G C D H K J
DIM A B C D G H J K L S V
INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236
MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR
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BCW32LT1
Thermal Clad is a trademark of the Bergquist Company
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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BCW32LT1/D

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